Sentence examples for model for gate from inspiring English sources

Based on characteristics method, a 1-D unsteady flow numerical model for gate regulation was established in this study.

In this work, an analytical drain current model for Gate and Channel Engineered RingFET (GCE-RingFET) has been developed by solving 2D-Poisson equation in cylindrical coordinates.

The Blm10 C terminus binds in the same manner as seen for 11S activators and inferred for 19S/PAN activators and indicates a unified model for gate opening.

A compact model for gate tunneling current in advanced nano-scale MOSFET has been developed on the basis of both direct and Fowler Nordheim tunneling through dual layer Silicon oxide–Hafnium oxide stack used as gate dielectric.

Unlike soft error modeling for gate-level netlists, soft error propagation models for high-level behavioral designs are not straightforward.

We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation.

In our results, we appreciate that with the genetic algorithm, one can achieve good fidelity and found that little voltage pulses are required for σx and σy and improve gate fidelity, therefore making our proposal of the graphene QD model for quantum gate implementation viable.

The developed potential model has been used to formulate a new model for total gate, drain and source charge.

This work proposes such a model for device gate impedance that is simulator-friendly, compact, frequency-independent, and relatively portable across technology nodes.

In this work we have proposed an analytical model for Double Gate Ferroelectric Junctionless Transistor (DGFJL), a novel device, which incorporates the advantages of both Junctionless (JL) transistor and Negative Capacitance phenomenon.

Here, using targeted molecular dynamics simulations, we developed an atomistic model for the gating of the GluN1/GluN2A NMDA receptor.