The laser spectrum just above threshold indicates that the device operates on the fundamental mode and we can clearly get the stopband of the fundamental mode when the current is 285 mA.
The influence of the material initial anisotropy on damage growth, localization and failure mode can also be clearly put in evidence through various data.
More interestingly, for InAs NWs with smaller diameters (larger surface-to-volume ratio), the SO phonon mode can be more clearly distinguished.
Furthermore, by means of spectral analysis and time frequency representations, diverse track defects, track singularities and vibration modes can be clearly identified.
Three vibrational modes can be clearly identified.
These modes can be clearly revealed by the charge distribution profiles at their corresponding peak wavelengths.
The structural and antenna modes can be clearly distinguished, where only the latter depends on the antenna load.
However, for the GaSb nanowires, because the nanowires are grown along vertical (111) direction and with six {110} sidewalls, both the TO and LO phonon modes can be clearly observed in the Raman spectrum.
As a result, the present developments provide both analytical and experimental basis for achieving quantitative weld sizing so that weld throat fatigue failure mode can be effectively prevented with a clearly defined confidence level without the need of over-sizing.
