Sentence examples for mobility were extracted from inspiring English sources
The characteristics were measured at a drain bias of 1 V. Values of threshold voltage were extracted by extrapolation of the linear transfer characteristic and values of field-effect mobility were extracted from the transconductance and are summarized in Table 1.
Non-restorable grossly decayed teeth and teeth with signs of radiographic pathology and pathological mobility were extracted.
Three-dimensional physical simulations were performed for the structures and the Hall mobility was extracted.
The behavior of the moving group targets in the area such as the time evolution of the regional traffic mobility was extracted.
The field effect mobility was extracted from the maximum point of transconductance (g m) using the following equation mu_{eff} = frac{{Lg_{m} }}{{WC_{i} V_{DS} }} (1 where C and g m are gate capacitance per unit area and the transconductance, respectively.
The field-effect mobility was extracted in the saturation regime from the highest slope of |I DS|1/2 vs. V GS plots by using the following equation: {I}_{mathrm{DS}}=left(W/2Lright)mu {C}_{mathrm{i}}left({V}_{mathrm{GS}}-{V}_{mathrm{TH}}right) Fig. 1 a Schematic representation of OFET fabrication by spray coating.
Across 5 thin films (15 devices, 6 traces per device) prepared from three separate syntheses of CdSe-CdCl 2/NH 2Bu annealed at 250 °C and with <5 nm domains, an average field-effect mobility was extracted in the linear region (⟨μLin⟩ = 14 5) cm/(Vs)).
From these micro- and nanochannels measurements, specific surface charge, zeta potentials, and electroosmotic mobilities are extracted directly from the experimental data.
The semiconductors used by Brondijk et al. exhibit significantly lower mobilities, even when compensated for the fact that the obtained mobilities are extracted in the linear regime instead of the saturation regime.
The mobility data were extracted from two different MD techniques as a function of temperature and misorientation.
The electron and hole mobility of GFETs were extracted by fitting the n- and p-region of the ambipolar curves separately, according to the following equation [29, 30]: Open image in new window Fig. 4 AFM topography images of a GFET before (a) and after (b) laser cleaning of the graphene channel.
