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To aggregate mobility values to sublocations for comparison, each household was assigned the mobility value of the nearest mobile phone tower and a corresponding travel-time estimate.
Measured Hole mobility value of HTM2A with hole dominant device was 5.3 × 10−4 cm2 V−1 s−1, which was better than NPB.
Their electrical properties are evaluated by bottom-gate FETs, and a field-effect mobility value of ~1.06 cm2 V−1 s−1 and a current on/off ratio in the order of ~ 105 are obtained.
The instrument has a high resolving power, around 100, and a reproducible reduced mobility value of ∼1.48 cm2/Vs (relative standard deviation below 1%) for 2,6-di-tert-butylpyridine (2,6-DtBP) was obtained with all of the ionization methods.
The PB10 dielectric with the mobility value of 2.76 × 10−1 cm2 V−1 s−1 provided the greatest performance in the IBX series.
In this work, the mobility value of the InSb nanowire is 215.25 cm2 V−1 s−1, which guarantees the effective transport of the electrons between two electrodes.
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The carrier mobility values of this work were extracted by fitting ID1/2 VGS curves in saturation regime with the following device parameters: dielectric constant, dielectric thickness, and W/L.
To better understand transport in these systems, density functional theory calculations were carried out, indicating theoretical maximum ambipolar mobility values of ∼0.3 cm2/V s.
Collection and shielding efficiency studies are carried out at this membrane electrodes system to measure mobility values of charged ferrocene species within nanochannels of alumina membrane.
Our planar bottom-contact transistors show much higher mobility than conventional bottom-contact counterparts and even higher than the reported mobility values of top-contact counterparts for each thickness in the range from 2.5 to 10 nm.
The obtained boundary mobility distribution exhibited a non-monotonic behavior with a maximum corresponding to misorientation of 38° ± 2° about 〈111〉 axes ± 4°, which was 10 100 times higher than the mobility values of random high angle boundaries.
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