Graphene, an almost perfect two-dimensional crystal, has been intensively investigated for the last decade, since its discovery in 2004 [1,2], due to its remarkable physical properties such as high thermal conductivity, high mobility, room-temperature quantum Hall effect, outstanding flexibility, and tunable bandgap [3-11].
Huang, Z., Zhang, W. & Zhang, W. Computational search for two-dimensional MX2 semiconductors with possible high electron mobility at room temperature.
The electron transport mobility at room temperature for TTPO and its fluorinated derivatives are in the range from 0.09 to 1.01 cm2 V−1.011.01
Experimentally, we demonstrate the discovery of the first generation of crystalline solids, i.e., spinel MgX2Z4, with X = (In, Y, Sc) and Z = (S, Se), which possess high Mg2+ cation mobility at room temperature.
For the strained Si0.5Ge0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm2 V−1 s−1 with a carrier concentration of 1.3×1018 cm−3 for n-type carrier, although the carrier origin was unclear.
By transferring metal films (silver or platinum) with a work function that matches the conduction band or valence band edges of molybdenum sulfide, we achieve transistors with a two-terminal electron mobility at room temperature of 260 centimetres squared per volt per second and a hole mobility of 175 centimetres squared per volt per second.
The p-doping problem in p-GaN layer also constrains the performance of photoanode, which results in low hole mobility at room temperature.
Graphene is a promising material for nanoelectronics due to its high carrier mobility at room temperature and excellent mechanical properties [1, 2].
Phonon scattering becomes dominant due to the presence of high-k dielectric material and leads to a drastic decrease in electron mobility at room temperature (300 K) [230].
Since we measured the Hall mobility and room conductivity of samples with and without doping, one can also estimate the carrier concentrations again from the formula: σ = nμq.
Such huge binding energy provides the high exciton mobility at room temperature with the large diffusion length (more than 120 nm) [6 9].
