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The mobility of graphene is very high because the quantum Hall effects can be observed even at room temperature.
The high intrinsic carrier mobility of graphene has drawn much attention.
Recently, hybrid graphene quantum dot (Gr/QD) systems have emerged as high responsivity photodetectors, taking advantage of the high charge carrier mobility of graphene and the high light absorption of PbS quantum dots.
The carrier mobility of graphene is greatly improved by several tens of times and the hole/electron conductivity saturation is shown.
The enhancement of photocatalytic performance could be attributed to the fast photogenerated charge separation and transfer due to the high electron mobility of graphene sheets, improved light absorption, high specific surface area as well as multi-porous structure of the hybrid.
The carrier mobility of graphene films grown on these CuNi and AuNi alloy catalyst was measured to be over 9000 cm2 V−1 s−1 at room temperature, which is comparable to that of CVD graphene film grown on Cu foil.
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The extracted field effect hole and electron mobilities of graphene are ~ 1010 cm2 V− 1 s− 1 and ~ 3550 cm2 V− 1 s− 1 respectively; and the field effect carrier mobilities of MoS2 and WSe2 are ~ 0.06 cm2 V− 1 s− 1 and ~ 0.03 cm2 V− 1 s− 1, separately, which are comparable with experimental results of other reports.
The substrate effects, with respect to the mobility limitation of graphene, include the scattering of carriers in graphene by charged impurities [64] and surface phonons [60]: the FET mobility of graphene/SiO2 is several orders of magnitude lower than that of suspended graphene devices [60,61].
The electron mobility of the graphene film is 5.1 × 104 cm2 V−1 s−1, the scaled transconductance of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is as high as 100.
The conductivity, carrier concentration, and mobility of iodinated graphene oxide (I-GO) are significantly increased about five orders of magnitude compared with pristine graphene oxide (GO).
Following equation (2), the field effect mobility of the graphene film can thus be obtained in each pixel of the mapped area by retrieving the slope |Δσs/ΔVg| in the high density-region well below the CNP.
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