Sentence examples for mobility of approximately from inspiring English sources

The performance of the TFTs showed that a-Si layers formed in the upstream portion of the plasma zone had reasonably good electrical property (field-effect mobility of approximately 2 cm2/V s) despite very high deposition rates around 20 nm/s.

Results show that (1) the total transmittance is always approximately 80% at a wavelength of 500 nm when the thickness of the ITO films exceeds 70 nm and (2) ITO thin films with electrical resistivity of 6.2×10−3 Ω cm, free carrier mobility of approximately 1.2 cm2 V−1 s−1 and free carrier concentration of approximately 8.6×1020 cm−3 are obtained, for films 100 nm thick.

Remarkably, the 2DEG at spinel γ-Al2O3/perovskite STO interface showed an astonishingly high mobility of approximately 1.4 × 105 cm2 V−105−10526].

The whole program process is shown in Figure 13e, which exhibits a high mobility of approximately 103 cm2 V−1 s−1 and an ultrahigh integration density of over 200 Gbit/in.200

The MoS2 n-FET demonstrated a mobility of approximately 200 cm2/Vs, and an effective hole mobility for WSe2 p-FET of up to approximately 250 cm2/Vs was also reported [6,7].

Taking for the lifetime 1 ns and assuming for the UV intensity the experimental value of ≈3.0 mW/cm2, the generated electron density is approximately 5 × 1011/cm3, and the corresponding photocurrent at 0.3 V bias voltage across the approximately 1.8 μm distance between two electrodes (see Figure 1) is about 2.5 × 10-4 nassuminging an electron mobility of approximately 20 cm2/Vs [9, 10].

In our flame electrolyte, the dominant charged species were atomic or molecular cations and electrons, which have a difference in mobilities of approximately three orders of magnitude.

At the same time, their electronic, optical, and magnetic properties including carrier mobilities of approximately 200 cm2V−1s−1, photoluminescence, and weak room temperature ferromagnetism have been proposed [1 5, 10, 11].

Direct comparison of similar IBZO or ISZO devices with 5% alkaline earth oxide doping annealed without dipping in water shows intermediate mobilities of approximately 10 12 cm V 1 s–1.

TFTs made from thin films subjected to in situ UV annealing using the alkoxide molecular precursors at 225 °C show maximum mobilities of approximately 4 cm V 1 s–1 for IBZO, Figure 7a.

This discordance was mostly specific to samples of African descent with an estimated frequency of 5.1% and was a result of a mobility shift of approximately +0.84 nt.