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The Ge mole fraction, electric field and doping concentration dependence of minority electron mobility is obtained from the Monte Carlo simulation.
Instead of performing measurements on the source in the free state, the source mobility is obtained from measurements made in-situ.
In two-dimensional quasi steady state, the phase field model reduces to the relationship between normal velocity and the curvature of the boundary and the relationship between phase field mobility and the grain boundary mobility is obtained.
Greater hole mobility is obtained for OTFTs with a larger BaTiO3 content.
The best improvement on carrier mobility is obtained for 600-s annealing time.
Again, the highest electron mobility is obtained after the 600-s annealing process was applied.
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At last, the carrier mobility was obtained from the transfer time.
Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment.
The mobility was obtained as a function of temperature and thickness of the sandwiched emeraldine salt, respectively.
Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.
Significantly extending film absorption and increasing hole mobility were obtained in these SMs with enlarging Ar units from phenylene (Ph), naphthylene (Nap) to anthrylene (Ant).
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Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com