Sentence examples for mobility higher than from inspiring English sources
On the other hand, highly soluble 2,7-dialkyl[1]benzothieno[3,2-b][1]benzothiophenes gave solution-processable OTFTs with mobility higher than 1.0 cm2 V− 1 s− 1.
The absorber defect density less than 1014 cm−3, interface defect density less than 108 cm−3 and hole mobility higher than 15 cm2/V.s in Sb2Se3 layer is required to guarantee good device performance.
Theoretically, perovskite can achieve charge mobility higher than that of crystalline silicon [34].
Nowadays, PDI_CY n-type OFET, exhibiting charge carrier mobility higher than 1 cm2/Volt sec [11, 12] are among the most studied devices in the emerging field of organic electronics [5].
In addition, there is a great demand for TFTs with electron mobility higher than 30 cm2/Vs in order to realize the required display resolutions and pixel circuits[5].
High switching on/off ratio of 108, charge carrier mobility higher than ~60 cm2 V−1 s−1, and subthreshold swing of 74 mV per decade (increase in gate voltage required to change the drain current by one decade. Here decade represents the 10 times increment in drain current) were reported in top-gated MoS2-based FET at room temperature [30, 31, 32].
At low temperature regime, hole mobility is higher than electron mobility by a factor of 3 to 4. However, at high temperatures (T > 120 K), the mobility of p-type samples is restricted by the scattering of the optical phonons.
Alcohol use among male migrant workers with high degree of mobility is higher than the male migrant workers with low degree of mobility [77 vs. 60.1%, adjusted odds ratio (AOR) = 2.1, 95% confidence interval (CI) = 1.8 2.3].
For films of Dendrimer 2 the charge mobility was higher than Dendrimer 1 but was still limited by a low density of strongly interacting electroactive chromophores.
Moreover, its electron mobility is higher than that of TiO2 for 2 to 3 orders of magnitude [7].
Because the two-dimensional electron gas (2DEG) is undoped and ionized donors are spatially separated from 2DEG, electron mobility is higher than that in bulk Ga1 − xIn x N y As1 − y semiconductor.
