Sentence examples for mobility fluctuations from inspiring English sources

Exact(5)

We attribute the MR mechanism of the FLG to mobility fluctuations Δμ.

The noise of the access resistances at 300 K originates from mobility fluctuations, while at low temperature operation it seems to have a trapping detrapping origin.

Finally, for the first time, the behavior of 1/f noise for HOT nMOSFETs was investigated, and could be described by a unified model, i.e. a combination of carrier-number fluctuations and mobility fluctuations.

The low-frequency flicker noise in most materials has a power spectral density (PSD) with 1/f frequency dependence and can serve as a diagnostic of the presence of structural defects arising from mobility fluctuations.

This in turn causes the growth of mobility fluctuations in the channel because of increased interaction and scattering rates as result of scattering, first, between carriers, and second, between the carriers and acoustic phonons, as well as on different impurity traps [27].

Similar(54)

The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation.

Usually, a low γH is associated with a sample with less defect density that contributes to the 1/f noise arising from the defect-mediated mobility fluctuation [18].

In contrast to the dominance of mobility fluctuation noise mechanism in monolayer MoS2 FET [73], the dominance of noise mechanism in as-fabricated multilayer MoS2 FET is demonstrated to be the carrier number fluctuation.

This can be intrinsic for the NW and can arise either from the defect-mediated mobility fluctuation or the carrier density fluctuation which arises from recombination-generation process [16].

From the experiments it is found that mobility fluctuation is the only origin for the 1/f noise observed both in InGaAs bulk material and in 2DEG heterostructures of high quality.

However, when the drain voltage was high, 1/f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/f noise and insignificant body effect.

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