Sentence examples for mobility electron density from inspiring English sources

Moreover, the electron mobility, electron density, and areal resistance did not change upon further increasing the thickness of the SiN passivation layer.

Based on Hall measurements of AlN/GaN heterostuctures with different SiN thicknesses, the electron mobility, electron density, and sheet resistance were found to have remained quasi-constant with increasing SiN thickness, which demonstrated that the stress induced by the presence of the SiN film should not be an essential reason for the increased 2DEG density.

(a) Mobile electron density and (b) trapped electron density.

(a) Trapped electron density and (b) mobile electron density.

Low field mobility versus the electron density.

Fig. 4 a Measured electron mobility, b 2DEG electron density (n s), and c areal resistance (R sh) of AlN/GaN heterostucture, at room temperature, as a function of SiN thickness.

Figure 4 shows (a) the room-temperature electron mobility, (b) 2DEG electron density, and (c) areal resistance of the AlN/GaN HFETs before, and after, SiN deposition, as a function of SiN thickness.

At 1.5 K, the measured electron density (mobility) was 1.80×1011 cm −2(2.17×106cm2V−1s−1) therefore, the mean free path is over 10 μm which is much larger than the electron propagation length.

Asp65 has two possible conformations and the side chain of Asp65 seems to have considerable mobility based on the electron density map.

The dihydropyrimidine ring of GSK180736A exhibits a large degree of mobility based on its electron density and temperature factors, but it is positioned such that it could form a hydrogen bond with backbone carbonyl of Arg199 in the P-loop and van der Waals interactions with residues in the large lobe.

Depending on electron density, electron mobility and thickness of SnO2 layer, the working temperature changes between 150 °C and 230 °C which is within the range of experimentally reported values.