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Their mobility decreased with increasing factor levels.
The carrier mobility decreased and carrier density increased with DP.
As shown in Figure3, Hall mobility decreased from 0.9024 to 0.2901 cm2/Vs with Sb doping.
After 600-s annealing is applied, hole mobility decreased with N amount.
However, as the BaTiO3 content was greater than 12 wt%, the device mobility decreased.
The field-effect mobility decreased with decreasing GNR widths due to carrier scattering at the GNR edges.
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The surface mobility decreases rapidly as Helmholtz number increases.
This hyperdynamic mobility decreases as cellularization and differentiation programs set in.
As the degree of t-butylation increases, the carrier mobility decreases progressively.
Mobility decreases with age as presumably the costs of moving become higher.
In the meantime, mobility decreases the throughput of DOMCT-UC by 7%.
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