Sentence examples for mobile dislocations in from inspiring English sources
The higher [1 1 0] creep rates at strains exceeding 2% result from a combination of a higher number of cutting events (density of mobile dislocations in γ′) and a higher superdislocation mobility (〈2 2 0〉 glide) in the γ′ phase.
The immobile dislocations on the machining-induced surface serve as the origin of mobile dislocations in the nanoindentation.
The approach is based on the introduction of an additional activation energy into the rate equation for mobile dislocations in the vicinity of grain boundaries.
The density of mobile dislocations in the hydrogen-charged iron has a lower rate of exhaustion than the hydrogen-free one.
This can be attributed to a reduced number of mobile dislocations in the material after annealing, as supported by implemented porosity maps on indent cross-sections, showing distinct differences for tests at varying temperature.
Since the immobile dislocations on the machining-induced surface lead to the nucleation of mobile dislocations, the quality and distribution of dislocations on the machine-induced surface determine the penetration of mobile dislocations in the specimen.
Of particular interest is the phenomenon of "brittle" crack growth in the presence of pre-existing, apparently mobile, dislocations, which has been observed in several material systems.
The chapter discusses the investigations on the dislocation mobility and mobile dislocation density (that is, in a manner correlated to dislocation exhaustion) in the intermetallics Ni3Al and γ-TiAl.
Mobile dislocations can typically escape faster in a smaller sample, leading to a lower mobile dislocation density and an increased resistance to plastic flow.
At 350 °C, the kinetics of mobile dislocations becomes very jerky and inhomogeneous, in agreement with a dynamic strain aging mechanism.
The interstitial nitrogen atoms can reduce the stacking fault energy of the material and also play an important role in interaction with mobile dislocations during HPT.
