Sentence examples for mixture of silane from inspiring English sources

The process gases used were pure nitrogen and a mixture of silane and helium.

These two liquid routes of nanoparticles synthesis are also compared to the very efficient gaseous route of SiC nanopowders synthesis from a mixture of silane and acetylene.

The efficiency of tailored sol-gel entrapment using a ternary mixture of silane precursors was demonstrated for the continuous-flow kinetic resolution of aliphatic and aromatic secondary alcohols catalyzed by lipases.

Furthermore, the ignition limits (upper and lower) of the mixture of silane - oxygen and silane - air at pressures from 0.05 to 1.1 atm and temperatures between 350 and 640 K on the basis of detailed chemical kinetics model were found.

In this paper, the development of physical and mathematical model of ignition, combustion and detonation of the mixture of silane, hydrogen, oxygen and an inert gas (nitrogen, argon) is proposed, based on detailed kinetics.

The experimental results clearly demonstrate that uniform crystalline Si QDs with a size of 3 4 nm embedded in the silicon-rich (carbon content up to 10.7at.%) a-SiC matrix can be formed from the reactive mixture of silane and methane gases, with high growth rates of ∼1.27 2.34 nm s−1 and at a low substrate temperature of 200 °C.

Gas mixtures of silane (SiH4) and ammonia (NH3) are used for plasma enhanced chemical vapour deposition (PECVD) of silicon nitride films (SiN).

The goal is to develop direct analytic expressions for estimating the feasibility and efficiency of the method, and guide process design; this is only possible for binary mixtures of silane in the dilute limit which is a somewhat realistic case.

Two different types of samples are studied, grown using two gas mixtures, composed of silane and nitrogen with and without ammonia.

And instead of employing fluorine, it relies on a novel mixture of methyl-silane gas and hydrogen peroxide.

Experiments were made to produce SiOxCy coatings by PECVD on polycarbonate substrates at a temperature below 80°CC, using a gaseous mixture of methyltrimethoxy-silane (MTMOS) [CH3Si OCH3 3] with O2 and CH4.