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The meta isomer, the principal component of the remaining liquid, then can be purified by taking advantage of its solubility in a mixture of hydrofluoric acid and boron trifluoride.
The electrolyte solution used was a mixture of hydrofluoric acid and ethanol, 1 4 by volume.
The wafers were electrochemically etched in a mixture of hydrofluoric acid with pure ethanol and then the Si-ncs were harvested by mechanical scratching and sedimentation [5, 17].
A mixture of hydrofluoric (HF), nitric (HNO3), and acetic (CH3COOH) acids (i.e. HNA) is most commonly used as silicon isotropic wet etchant [21,22].
In both steps, the electrolyte used was a mixture of hydrofluoric acid (HF) and ethanol in two different volume concentrations, namely 7HF 3ethanol or 4HF 6ethanol.
The process consists of sequential immersion of the glass in a mixture of hydrofluoric (HF) and sulphuric (H2SO4) acid, followed by rinsing to remove insoluble lead sulphate particles from the interface.
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For the solution etching process, an etching mixture consisting of hydrofluoric acid [HF], hydrogen peroxide [H2O2] and de-ionised water was used at room temperature.
Silicon substrate was etched in a solution containing 1 1 volume mixture of 48% hydrofluoric acid (HF) and anhydrous ethanol.
Porous silicon was prepared by anodic electrochemical etching of highly doped 0.95 mΩ cm p++-type (100 -oriented silicon wafers (Virginia Semiconductor, Fredericksburg, VA, USA) in a 3:100 -orientedre of aqueousiliconfluoric acid (49%) and ethanol.
Niobium can best be dissolved in a mixture of nitric and hydrofluoric acids.
Boron-doped p-type silicon wafers (B-doped, orientation <100>, Siltronix, Inc., Archamps, France) with a resistivity in the range of 1 to approximately 10 Ω·cm were used to fabricate photoluminescent PSi by an anodic etch in ethanolic HF consisting of a 1 1 volume mixture of aqueous 48% hydrofluoric acid (Sigma-Aldrich Corporation, St . Louis MO, USA) and absolute ethanol (Sigma-Aldrich).
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