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We present a molecular dynamics model that accounts for the formation of similar ripples as result of the lattice mismatch induced by two different grain orientations.
On as-received and etched (111) STO, ZnO films show the same growth direction with polar (0001), but different in-plane orientation with 30° rotation and a large lattice mismatch induced by the extra interface chemical energy of etched (111) STO with more dangling bonds.
A conventional high reflectance (HR) coating sandwiched between two thickness-tapered period thin film stacks is investigated to enhance multichannel spatial dispersion, since phase shift on reflection changes rapidly due to the mismatch induced by the overlaps of different reflective bands.
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Furthermore, the phase mismatches induced by the distortion and stress were calculated; finally, the SHG efficiency was solved considering the phase mismatch.
While aberrations are usually compensated in DHM through a calibration step in order to obtain a flat phase profile, this approach can also be used to estimate the aberrations present in the Raman channel, and pre-compensate for the possible mismatches induced by the aberration differences within the different arms of the microscope system.
In particular, in MMR-deficient tumors, mismatches induced by 5-fluorouracil are tolerated, leading to failure to induce cell death (Fischer et al., 2007).
Widespread use of solid oxide electrolyzer and fuel cells is hindered by a lack of long-term durability of seals caused by thermal expansion mismatch induced cracking.
Moreover, in (17), the dominant eigenvectors can span the desired signal subspace containing the mismatch signatures induced by CFO effect.
The thermal mismatch stresses induced by thermal cycling loads in the interconnects that are composed of a through silicon via (TSV) and microbumps are a serious concern, and thus, a thinner stacked die is required.
The total mismatching error induced by Faraday-wedge in nonplanar ring resonator has been defined and eliminated quite accurately with the error less than 1 μm.
This is attributed to a buckling instability driven by the residual thermal mismatch stress and induced by both void formation and a non-planar interface structure resulting from preferential diffusion along the Ni3Al grain boundaries.
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