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ITO films with a thickness of 300 nm have the lowest resistance of 138.5 Ω/sq and the minimum resistivity of ρ = 4.1 × 10− 3 Ω cm; The RMS roughness is 11.5 nm and the transmittance is 89.6% at a wavelength of 550 nm.
The minimum resistivity of doped diamond films reached 10− 2 Ω cm.
Typically, films as-deposited have a minimum resistivity of 2.2×10−3 Ω cm and an optical transmission >85%.
In addition, a minimum resistivity of 1.6 × 10− 3 Ωcm was obtained for the HZO film with 4.6 at.% Hf.
The ITO thin films containing 10 wt.% Sn showed a minimum resistivity of ρ=9.5×10−4 Ω cm.
A minimum resistivity of 3.46×10−4 Ω cm and more than 80.0% transmittance at 550 nm have been obtained.
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The temperature showing the minimum resistivity was lowered with enlargement of crystallite size along the a-axis, La.
For the temperature dependence of resistivity of these products, it was observed that the minimum resistivity was located at the temperature ranges from 450 to 700 °C.
The minimum resistivity 0.15 × 106 Ω cm and maximum conductivity 6.66 × 10−6 1/Ω cm of film have been obtained.
A sharp minimum in resistivity of 4.9 mΩ cm is observed at an oxygen content of approximately 17% in the sputtering gas.
The minimum electrical resistivity of the cement slurry was linearly related to the water-to-cement (w/c) ratio of the cement slurry and it decreased with increased w/c ratio.
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