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The focus of this study is to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance.
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As-implanted SIMS profiles show excellent repeatability of junction depth.
This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries.
The extent ("gate overlap") and slope ("abruptness") of the lateral junction are quickly replacing vertical junction depth as the most important physical junction metrics in advanced device architectures.
The junction depth is about 10 nm with the HWCVD doping time of 25 min [27].
The junction depth Xj and the surface concentration Cs are given for both diffusions.
Dopant depth profiles are used to show superior control over junction depth, equivalent dose control and shallower junctions for pulsed plasma implantation.
The decrease in Voc is found to be dependent on junction depth.
The profile edge and the junction depth are located at 0.2 and 1.35 μm, respectively.
We have performed a Design Of Experiment (DOE) study with AsF5 implants to model the junction characteristics (junction depth Xj, sheet resistance Rs).
A critical point is identified, where control of SCEs by junction depth is lost and this leads to appropriate junction design in JS vertical sidewall MOSFETs.
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