Your English writing platform
Free sign upSuggestions(3)
Exact(1)
These parameters were selected to replicate the operating characteristics of our pre-clinical imaging platform [ 16] and correspond to the typical minimum gate width.
Similar(57)
The gate width is 50 μm.
The gate width, gate-source spacing, gate length, and gate-drain spacing were 50, 4, 2, and 4 μm, respectively.
The 3D III-V nMOSFET has a total gate width W/gate length L = 0.6 0.5 μm.
Design optimization for the stacked gate architecture to obtain the minimum gate leakage current is evaluated.
These devices are with source-gate spacing L GS of 1 μm, gate length L G of 2.5 μm, drain-gate spacing L GD of 6 μm, and gate width of 60 μm.
The HEMT device was realized with a 2-μm gate length (L G), 2-μm source-to-gate distance (L SG), 10-μm gate-to-drain distance (L GD), and 100-μm gate width (W G).
Because, sub-threshold and leakage current both depend on the total gate count, transistors and gate width, a pipelined approach makes substantial contribution in reducing the leakage current.
A gate width of 300ps was selected to avoid temporal errors due to jitter when employing 200ps gates [ 41].
The Doppler gate width was kept small, and the angle of insonation was maintained at or lower than 60°.
Conversely, as the FWHM of the IRF is comparable to the gate –width, increasing the gate-width (Fig. 2(b)) limits the range of optical properties that can be accurately estimated on this platform as the width of the IRF becomes comparable to the width of the TPSF measured for tissues having high absorption coefficient and/or low scattering coefficient.
Write better and faster with AI suggestions while staying true to your unique style.
Since I tried Ludwig back in 2017, I have been constantly using it in both editing and translation. Ever since, I suggest it to my translators at ProSciEditing.
Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com