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Where N is a factor equals unity for the minimum dislocation density.
The maximum grain size 43.82 nm and minimum dislocation density 0.52 × 1015 line/m2 have been obtained and its value nearly saturated above at 400 K.
The maximum grain size 43.82 nm and minimum dislocation density 0.52 × 1015 line/m2 have been observed for the ZnS thin film deposited at temperature 400 K whereas Haque et al. [22] have reported the grain size of 34.08 nm and dislocation density 0.86 × 1015 line/m2 for ZnS thin films by R F Magnetron sputtering.
Similar(57)
threading dislocation density.
Second-order dislocation density tensor.
However, this dislocation density increases due to dislocation propagation.
Dislocation density is measured using imaging cathodoluminescence.
Undeformed samples contain a low dislocation density.
Generally, higher dislocation density induces higher hardening.
This process exhausts nucleated dislocations in nanosphere and reduces dislocation density, corresponding to the dislocation starvation mechanism.
But dislocation cell structure was not observed at 873 K, dislocation density decrease to low level.
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