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The minimum band gap for a single-junction device in order to withhold unbiased overall water splitting is considered to be at least 2.0 eV.
In designing, the criterion to attain the optimum solution at the end of GA run is minimum band gap and maximum delocalization in the polypeptide chain.
The minimum band gap 3.43 eV has been found.
The minimum band gap 3.43 eV has been observed.
The minimum band gap obtained was 3.43 eV at 400 K.
Note the Ti2+ content is significantly higher in sample 2 than sample 4 in accord with a lower minimum band gap for the former.
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All of small molecules exhibit broad absorption spectra from the visible to near-infrared region, and Ph(DPP-ThR 2 DPP-ThR 2e minimum optical band gap of 1.48 eV.
For armchair nanotubes, the ZnO codoping prefers to the radial direction of the nanotube, and a minimum of band gap at 1.27 eV is achievable at the concentration of 31 at.%.
The minimum direct band gap (3.43 eV) has been observed for the ZnS thin film deposited at substrate temperature 400 K.
Assuming that the lateral spacing of the effective band gap (potential) minimum determines the carrier diffusion length in InGaN, the carrier diffusion length was estimated to be 60 nm (28).
Since the SB height is half of the band gap, the minimum currents exist at the gate voltage of VG,min = 1/2VD, at which the conduction band that bends at the source extreme of the channel is symmetric to the valence band and also bends at the drain end of the channel, while the electron current is the same as the hole current.
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