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Selenisation at ca. 500 °C for 30 min in selenium vapour gives CuInSe2 (or CISe).
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Hence, the total deposition duration (including off time) was 20 min. All samples after depositing by ECD were annealed at 200°C for 3 min in the air to improve the crystallinity of selenium layers.
The crystallinity of the selenium after annealing at 200°C for 3 min in the air was significantly improved.
The crystallinity of the selenium layer after annealing at 200°C for 3 min in the air was significantly improved, and the band gap became narrower in comparison to the sample both with and without annealing at 100°C.
However, the surface became smoother after depositing selenium as shown in Figure 3d. Figure 3f shows the surface morphology of selenium-coated porous TiO2 after annealing at 200°C for 3 min in the air.
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