Then, BaTiO3 nanocrystalline powder was synthesized by the hydrothermal sol-gel method under atmospheric oxygen.
A porous SrTiO3 (STO) three-dimensional (3D) hierarchical structure is fabricated by a rapid "TEG-sol" method under atmospheric pressure.
In this paper, the solubility of 3-chlorophthalic anhydride and 4-chlorophthalic anhydride in methyl acetate + cyclohexane binary solvent mixtures was determined from T = (283.15 to 328.15) K by gravimetric method under atmospheric pressure.
In this study, the solubility of 4-methylbenzoic acid was measured in (methanol + acetic acid) binary solvent mixtures in the temperature ranging from 283.15 to 333.15 K by the analytical stirred-flask method under atmospheric pressure.
In this study, the solubility of itaconic acid was measured in methanol, ethanol, 1-propanol, acetonitrile, 2-propanol, ethyl acetate, and acetone with the temperature range of 283.15 328.15 K by the analytical stirred-flask method under atmospheric pressure.
The solubility of -shikimic acid ((3R,4S,5R -(E -3,4,5-trihydroxy-1-cyclohexenecarboxylic E -3,4,5-trihydroxy-1-cyclohexenecarboxylic E -3,4,5-trihydroxy-1-cyclohexenecarboxylic E -3,4,5-trihydroxy-1-cyclohexenecarboxylic E -3,4,5-trihydroxy-1-cyclohexenecarboxylicto 362.15) K using the synthetic method under acidspheriCASRNssure.
The polymer film was deposited on a Si substrate by the PECVD method using a single molecular precursor, and the film was then treated using the DBD plasma surface treatment (or modification) method in N2 plasma under atmospheric pressure to form the amine groups on the surface.
The plasma-polymerized cyclohexane films, with an average thickness of 200 nm, were deposited on the Si substrate at a RF power of 20 to approximately 50 W according to the PECVD method using cyclohexane, and these films were then treated by the DBD method in a N2 environment under atmospheric pressure at a RF power of 150 W for 60 s to form the amine groups on the polymer film surface.
The plasma-polymerized cyclohexane film was deposited on the Si substrate according to the radio frequency plasma-enhanced chemical vapor deposition method using a single molecular precursor, and it was then treated by the dielectric barrier discharge method in a nitrogen environment under atmospheric pressure.
AAS is a novel powder spray method, which can form a film under atmospheric pressure and low temperature conditions.
The proposed method was conducted at 10 °C and under atmospheric pressure to obtain a stable and highly homogeneous solution, without the need for microwaves or any other apparatus.
