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We apply this method to strongly coupled parabolic systems describingdiffusing mixtures.
In this paper, a multiple temperature model is proposed to extend the IP method to strongly translational nonequilibrium gas flows.
This paper concentrated on developing a simple one-step method to strongly attach an efficient organic inhibitor to stainless steel substrate.
Based on cavity quantum electrodynamics (QED), we investigate the light-matterinteraction between surface plasmon polaritons (SPP) in a metal nanoparticle (MNP and the excitons in semiconductor quantum dots (SQDs) in an SQD-MNP coupled system.We propose a quantum transformation method to strongly reveal the exciton energyshift and the modified decay rate of SQD as well as the coupling among SQDs.
Likewise, viral-mediated expression of ChR2 with the use of variable-strength promoters is often a more potent method to strongly express ChR2 in cells of interest compared to transgenic models, but this too will lead to further variability.
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Fortunately, several methods to strongly enhance the writing field of MFM probes have been proposed recently, one of which is to applying an external field on a small coil mounted below the magnetic medium [32 38].
Recently, some researchers have generalized the results to real smooth Banach spaces, real uniformly smooth Banach spaces, real Banach spaces; or to the Mann iteration method, the Ishikawa iteration method; or to strongly pseudocontractive operators, local strongly pseudocontractive operators, strictly hemicontractive operators [9 19].
We introduce a robust and efficient method to simulate strongly coupled (monolithic) fluid/rigid-body interactions.
Therefore, an online method to identify strongly correlated generators is in urgent need for real-time control strategies generating when a WDO occurs.
In this paper, inspired by Hussain et al. (Fixed Point Theory Appl. 2015:17, 2015), we study a modified Mann method to approximate strongly fixed points of strict pseudo-contractive mappings.
This method allows to strongly enhance the relaxation rate (97%) of SiGe layers, and to improve their crystalline and morphological quality for their use for high-speed microelectronic and optoelectronic devices for which the surface roughness and the threading dislocation density are key issues.
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