In the present study, galvanic corrosion characteristics of Al Cr binary metal stack and Al Cr Au ternary metal stack in different etching solutions have been studied.
In the Hall-bar and transistor devices, the source/drain contact metal stack consisted of Ti/Au/Ti (5/15/5 nm).
The purpose of this paper is to present a fully-coupled electro-magnetic field formulation including Lorentz force corrections with the purpose of investigating ESD events in great detail in silicon (FEOL) and the metal stack (BEOL).
In a multilayer metal stack film, the knowledge of etch rate of the individual metal layers is very important for designing the process flow for the fabrication of micro-sensors.
This ability to accommodate large thermal strain mismatches allows the design requirement of thermal expansion matching between ceramic and metal stack components to be relaxed and expands the list of candidate materials that can be considered for the metal frames and interconnects.
The results show that the collective bidirectional growth is promoted and controlled by the chemical and physical restructuring of the sub-surface portion of the metal stack which undergoes micro-fragmentation as a result of the incorporation, diffusion, and precipitation of carbon.
