"metal source" is a correct and usable phrase in written English.
You can use it to refer to either a type of metal (e.g., "aluminum is a popular metal source for car parts") or a place where metal is obtained (e.g., "the foundry served as a reliable metal source for the manufacturing company").
Homo- and hetero-metallic catalysts were prepared in water from a single metal source and in a single step, and were tested in cinnamaldehyde selective hydrogenation.
Titanium tetraisopropoxide (TTIP) was used as metal source.
γ-MnS crystals were formed when metal complex was used as metal source whereas Mn3O4 was the dominant product when MnSO4·H2O was used as metal source.
As metal source, the developed baths contain nickel (II) sulfamate and copper (II) acetate.
In sputtering, a wafer and a metal source are placed in a vacuum chamber, and an inert gas such as argon is introduced at low pressure.
In the complex oxide film deposition, an interaction occurred with another metal source molecules in the film deposition reaction.
Both molecules are modeled within an electrostatic environment, which simulates metal source-drain electrodes on top of a dielectric substrate (shellac) with a metal back-gate.
The films have been deposited using a multi-metal source, consisting of the La (hfa 3diglyme and Co tta 2tmedaa (H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; diglyme = CH3O- CH2CH2O) 2CHttaHtta = α-thenoyltrifluoroacetone; tmeda = N,N,N′,N′-tetramethyl-ethylendiammine) precursor mixture.
Firstly, design of low temperature processing methods [17, 18], replacement of (CH3 2Cd as Cd-metal source by CdO [16, 19] and other Cd metal salts [20, 21] and lastly, the use of safe, cheaper, natural and more air stable coordinating solvents [17, 22, 23] such as olive oil have produced stable semiconductor nanoparticles.
Due to low parasitic S/D resistance the metal Source/Drain DM-GS-SB-S/D-GAA MOSFET demonstrates remarkable Ion of~31.8 μA/μm and saturation transconductance gm of~68.2 μS with improved third order derivative of transconductance gm3.
The results indicate that, compared to CVD nanotubes, although solution-processed SWNTs have much lower μ FE for semiconducting nanotubes and lower μ m for metallic nanotubes due to the presence of a higher level of structural defects, such defects do not affect the quality of electric contacts between the nanotube and metal source/drain electrodes.
