c Optical models of rough metal surfaces prepared with different metal gap sizes (d corresponds to the distance between two cylinders, and R is the radius of the metal cylinder).
Both the H-BC5 and H-BC7 sheets are half-metals, the half-metal gaps of which are 1.12 and 1.50 eV, respectively.
The half-metal gap, defined as the difference between the Fermi level and topmost occupied spin-down band, is 1.18 eV for the H-BC3 sheet.
A half-metal gap is opened in the spin-down bands, the value of which is about 1-2 eV depending on the boron contents.
Furthermore, La1.75CrFeO6 shows direct spin gapless semiconductor, and La1.5CrFeO6 behaves as half-metal with the half-metallic gap of 0.42 eV.
While characteristic changes of the optical properties by some treatments indicated the modification of the metal oxides gap states, a clear correlation with the electrical junction properties was not observed.
The oxide rod performance is limited by internal pressure due to fission gas release, while the hydride fuel can be limited by excessive clad deformation in tension due to fuel swelling, unless the fuel rods will be designed to have a wider liquid metal filled gap.
It was found that DG MOSFET with mid-gap metal gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness).
To this end, a double gold layer is attached at the C-terminated bottom of the slab which introduces a metal-induced gap state that pins the chemical potential inside the gap thus allowing a meaningful comparison of the QFG's dopings among different polytypes.
This is consistent with our theoretical analysis in terms of a simple model involving metal-induced gap states in organic layer.
The experiment result demonstrates that wide band gap semiconductor (WO3·0.33H2O) modified by narrow band gap metal oxide (Ag2O) with 3D architecture will be an effective route to enhance its photocatalytic activity.
