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Figure 3 shows the etching rate as a function of the metal coverage of the Si surfaces.
Thus, the etching rate of Si is determined by the dissolved oxygen concentration, the kind of metals, and the metal coverage of the Si surfaces.
Thus, we expect that the etching rate measured by the gravimetric procedure depends on the metal coverage of the Si surface.
Cu or Sn wire was used to vapor deposit thin coats of metal onto one side of a polished limestone block and yield a metal coverage of approximately 10-5 g cm-2.
Metal deposition was performed galvanically by adding a few drops of 0.1 to 1 mM metal salt solution to HF, resulting in metal coverage of about 5% of the Si surface.
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In this study we report the first results on the impact of metal coverage on the matching of high and low ohmic polysilicon resistors in a 0.35 μm analogue CMOS technology.
The influence of metal coverage on interface composition, structure, morphology, and particle size of Ag/PET films has been studied employing X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD).
In this paper we present a comprehensive study of the impact of asymmetric metal coverage on matched high performance MOSFET pairs.
Thus, control of metal coverage is important to the application of this kind of core-shell-shaped nanostructure [15].
It was found that the initial morphology of the noble metal coverage is crucial to the generation of the unique geometries of Si substrate [18].
Figure 3 Etching rate of metal particle-deposited Si wafers as a function of metal coverage.
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