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An extra-large memory window was also obtained by introducing photo-induced charge transfer effect.
For BBHE operation, the memory window was almost closed after 104 P/E cycles.
A faster program/erase speed as well as a larger memory window was achieved from the TBE-CTF memory.
At room temperature, no significant degradation of the memory window was observed, with the HRS ascending slightly.
This figure reveals that after 10 years, the memory window was still 2.2 V when using FN operation.
In retention characteristics, a degradation behavior in memory window was observed, though a well resolved memory window of approximately 10 after 105 s is maintained.
Similar(51)
The memory window is found to higher at low frequencies.
Furthermore, the memory window is found to be the function of frequency and higher memory window is achieved at the lower frequency region.
The memory window is opened to 5.2 V for 1 s.
The memory window is high only at lower frequencies (1 and 2 Hz) and tends to diminish at higher frequencies.
At room temperature, no obvious degradation of the memory window is observed with slightly increasing LRS and HRS.
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