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The small memory window leads to read/write errors in the memory architecture [17, 27].
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However, the current in HRS increases after about 100 dc voltage sweeping cycles, which leads to the memory window closing, as shown in Figure 4.
A typical design of the new structure leads to a programming duration of 10 ms and maintains a memory window of 3 V after 10-year data retention.
Figure 4 Memory window.
Scrolling the debugger's memory window or source code window requires quantities of memory data.
Meanwhile, it also shows a large memory window.
This modification leads to an effective increase in the read-out conductance ratio of two to three orders magnitude under low voltage operation, associated with a large memory window of ∼5.3 V.
c Change of onset voltages and the amount of memory window for polymer transistor memory.
The memory window is found to higher at low frequencies.
A faster program/erase speed as well as a larger memory window was achieved from the TBE-CTF memory.
Programmed data could be retained for 103 s with a memory window of 28 V.
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