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Figure 4 Memory window.
Meanwhile, it also shows a large memory window.
The memory window is found to higher at low frequencies.
Scrolling the debugger's memory window or source code window requires quantities of memory data.
Programmed data could be retained for 103 s with a memory window of 28 V.
An extra-large memory window was also obtained by introducing photo-induced charge transfer effect.
The P/E speeds of this device were 100 ms with 1.0 V memory window.
It is found that the memory window can be changed by adjusting the Si/SiO2 wt.
Furthermore, the memory window is found to be the function of frequency and higher memory window is achieved at the lower frequency region.
In retention characteristics, a degradation behavior in memory window was observed, though a well resolved memory window of approximately 10 after 105 s is maintained.
The obvious memory window can be used to define "1" and "0" states at low voltage operation.
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