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Two memory states are distinguishable.
Two memory states are distinguishable under the bipolar resistive switching.
On the other hand, the unipolar resistive switching means that the memory states are switched by applying bias voltages with the same polarity (curves 1 and 3).
One is VM migration, in which an already executing VM is suspended, its processor, disk and memory states are transferred; and finally VM execution is resumed at the destination from the same point of suspension.
The multi-level memory and memory-state-dependent PV effect of Pt/Nd:STO/In device unambiguously suggest that the memory states are mainly determined by the depletion layer near the Pt/Nd:STO interface.
According to Umezawa, coherent neuronal assemblies correlated to such memory states are regarded as vacuum states; their activation leads to excited states and enables a conscious recollection of the content encoded in the vacuum (ground) state.
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The current ratio between the two memory states is over 105 times.
The depletion layer can be adjusted by the pulse width or magnitude, so multi-level memory states were observed.
The resistance ratio between two memory states is about five orders of magnitude, which is stable over 104 s at 0.3 V stress.
In reality, the same neural group could fire at different time to represent different STPs, then the only difference in these memory states is their timings not firing activities.
In contrast, we found that simpler models without a memory state were unable to reproduce key aspects of rivalry.
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