Figure 7 Memory-retention time characteristics of the bistable memory device for 50 pulses.
Engagement equals retention and retention saves time and money.
The molecular and cellular mechanisms underlying aversive LTM are known to differ from those responsible for memories with shorter retention times (Yin et al., 1994; Pascual and Preat, 2001; Dubnau et al., 2003; Comas et al., 2004; Isabel et al., 2004; Yu et al., 2006; Blum et al., 2009; Akalal et al., 2010, 2011; Trannoy et al., 2011; Huang et al., 2012; Placais et al., 2012).
A thick tunnel barrier can guarantee a long retention time of the flash-memory device, but unfortunately, it slows down the programming speed.
The Adult Memory and Information Processing Battery [AMIPB] [ 13] is a tool that was designed to assess immediate registration of verbal information and retention over time.
For practical use in flash memory, the retention time is at least 10 years.
Lower operation voltage in FeFETs can reduce the depolarization field in the ferroelectric layer and the charge trapping induced at the semiconducting/ferroelectric interface, leading to a longer memory state retention time [1, 2].
To characterize an organic floating-gate memory, many parameters are used, such as the operating voltage, on/off ratio, memory window, program/erase speed, retention time, and endurance.
This study characterizes the charge storage characteristics of metal/HfO2/Au nanocrystals (NCs)/SiO2/Si and significantly improves memory performance and retention time by annealing the HfO2 blocking layer in O2 ambient at 400°C.
