We showed that, for linearly polarized light propagating in an optically thin medium, where polarization memory effects don't occur, the cross-polarized (VH) scheme permits to obtain a better optical noise rejection.
Other memory mechanisms including polarization induced by the polar molecule (such as H2O) adsorption/desorption and by the defect-related charge-trapping layer have also been studied [7 9].
We also showed that, if water turbidity increases up to degrees where multiple scattering events start playing a role-but polarization memory effects are still negligible—, the use of circularly polarized light in combination with a copolarized detection scheme provides slightly better results than the cross-polarized configuration based on linear polarization.
In multiple scattering regime, the presence of large scatterers combined with the use of circularly polarized incident light would in principle allow for the observation of polarization memory effects, giving rise to a situation where the RL scheme better rejects optical noise than the RR one.
In Hardhats, Hippies, and Hawks, Penny Lewis challenges this collective memory of class polarization.
HF, hydrofluoric acid; KIT-1, quartz-crystal-oscillator monitor system; MII-4, micro-interferometer; nc-Si, silicon nanoparticles; PL, photoluminescence; PM, polarization memory; SEM, scanning electron microscopy.
In porous silicon, the polarization memory (PM) effect that is the correlation between polarization of excited light and polarization properties of PL was found, and its features and mechanism were studied [5 9].
Different scattering regimes (Rayleigh, intermediate or quasi-Mie) were explored, mainly in the limit of optically thin medium, where single scattering prevails on multiple scattering and polarization memory effects are negligible.
Indeed, even the largest optical thickness considered in the experiments was still considerably less than the threshold value reported in the literature for the observation of polarization memory effects [41, 42].
The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si−SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated.
