Sentence examples for memory devices shows from inspiring English sources

Statistical distribution of the HRS and LRS of Al/Cu/TaO x /W memory devices shows also to be good in our previous study [17].

SONOS FinFET memory devices show excellent functionality down to 20 nm channel length.

The memory devices show an excellent cycle-to-cycle uniformity.

The S1 memory devices show stable AC program/erase endurance, as shown in Figure 9b.

Except for a few, memory devices show excellent device-to-device uniformity with a yield of approximately 90%.

All cross-point memory devices showed excellent switching with high yields of >95%, which is suitable for nonvolatile memory applications.

Initially, memory devices show low leakage current, which is controlled by the size of the device, and defects and thickness of the GdOx film.

It is important to note that all of the resistive memory devices show similar switching characteristics irrespective of the switching material.

The IrO x /GdO x /W via-hole memory devices exhibit negative switching polarity, whereas the IrO x /GdO x /W cross-point memory devices show positive switching polarity.

The S1 memory devices showed a leakage current of approximately 1.5 pA at a Vread of + 0.1 V for a pristine device, lower than that of the S2 devices (23 pA) (Figure 7a,b).

However, organic floating-gate memory devices showed a retention time in the range of 106 s, but this is still not enough and we need to find a way to keep the trapped charge carriers.