Sentence examples for memory devices is from inspiring English sources

Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design.

Stacking components helps in the transition to higher-density memory while the design and production capability for the next-generation of memory devices is being developed.

A HfO2/SiON/SiN (HON) bandgap-engineered trapping layer (BETL) on inversion-mode (IM) and junctionless (JL) polycrystalline-Si flash memory devices is investigated in this work.

The operational amplifier is the basic building block for analog circuits, and progress in op-amp performance is the "litmus test" for linear IC technology in much the same way as progress in memory devices is for digital technology.

The stability of spin-coating process, in its application to the production of magnetic memory devices, is considered on the basis of a microrheological modeling of the internal structure of the coating liquid which is identified with a dispersion of aggregating particles in a highly volatile medium.

Graphene-based resistive random access memory devices is a promising non-volatile memory technology that combines low operation voltage and power, extremely fast write/erase speeds, excellent reliability and storage capacity of RRAM with low-cost, large area and flexibility of carbon-based technologies.

The memory devices were heavy and slow.

Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool.

Memory devices are a special class of integrated circuits that are used to store binary data.

Man-made memory devices are now constructed using associative principles, and there is a great potential in this field.

Then, metal Al2O3 HfO2 Al2O3 HfO2 SiO2 Si (MAHAHOS) structure and metal Al2O3 HfO2 Al2O3 HfO2 Al2O3 Si (MAHAHAS) structure memory devices were fabricated and the memory characteristics were compared.