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Resistive switching characteristics of the Zr/CeO x /Pt memory device were demonstrated at room temperature.
The thicknesses of the resistive switching material and of the memory device were evaluated from a HRTEM image.
Furthermore, pulse read endurance and retention tests of the multilevel of memory device were also performed, as shown in Figure 11a,b, respectively.
The P/E characteristics of the memory device were also investigated by measuring the flat voltage shift (ΔV fb) induced by a pulsed P/E voltage.
Photoresist was coated on the patterned wafers and both the active and top electrode (TE) regions of the memory device were then exposed for a lift-off process.
Excellent read endurance characteristics of the Al/Cu/Ti/TaOx/W memory device were obtained even after >105 cycles under a read voltage of +0.1 V and CCs of 0.1 and 200 μA (Figure 12a).
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The third step, recording of the cast ballot in a memory device, is invisible to the voter.
Finally, the memory device was kept in a SET condition.
Another small but very important memory device is SRAM.
Finally, the memory device was kept in the SET condition.
The size of the memory device was 200 × 200 nm200
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