After the electroforming process, the memory device switches to low-resistance state (LRS).
As a result, the metallic filament forms due to the gradual process and the memory device switches from HRS to LRS, which is known as the SET process (Figure 20a).
It implies that external light can influence the Cu diffusion into GeSex solid electrolyte and makes stronger Cu metallic filament from BE to TE resulting to memory device switches from HRS to LRS.
When a negative voltage is applied on the TE, O2- ions are driven out from TE/GdOx interface and re-oxidize the conductive path and memory device switch back from LRS to HRS.
Lately, a novel memory device, resistive switching memory, has been extensively studied due to its great potential of low operation voltage, low power consumption, high operation speed, nonvolatility, and simple structure [1 8].
Examples of such devices include nanoelectronic devices and optoelectronic components [2 4], actuators and oscillators [5 7], memory devices and switches [8, 9], and mechanical, chemical, biological, and thermal sensors [10 13].
To begin to understand the physical constraints on the building of invertases-based memory devices and switching elements, we chose to construct a device like that shown in Figure 1C.
Utilizing this DMI step, we propose a domain wall memory device where the switching of up- and down-state is induced by a spin-orbit spin-transfer torque (SOT -driven domain wall motion.
The Ru/Lu2O3/ITO flexible memory device can be switched over 103 program/erase (P/E) cycle maintaining a memory window of approximately 103 at both room temperature and 85°C.
Our memory device shows good switching characteristics at low self-current compliance with tight distribution of HRS/LRS, excellent device-to-device uniformity, and program/erase endurance of >1,000 cycles.
Under external white-light illumination with an intensity of 2.68 mW/cm2 (wavelength ranges from 390 to 700 nm), memory device shows optical switching with long read pulse endurance of >105 cycles.
