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The fabricated memory device showed remarkable mechanical robustness when tested against 1500 bending cycles.

The W/TiO x /TaO x /W memory device showed good bipolar resistive switching characteristics with different CCs from 10too 100 μA (Figure 12[41]).

The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation.

The MAHAHAS structure memory device showed faster program and erase speed, stable data retention and endurance characteristics than the MAHAHOS structure memory device.

The VARIOT tunnel barrier memory device shows best retention properties compared to others.

First switching cycle of the memory device shows low formation voltage (Vform) +1.5 V.

The memory device shows a stable low-resistance state with for 103 s (blue line).

Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance.

The memory device shows long read pulse endurance measured at V read of 0.2 V (Fig. 6a).

This memory device shows good P/E endurance of >500 cycles at V read of 0.2 V (Fig. 6c).

On the other hand, our Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA.