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In addition, the memory device has a promising data retention behavior at 85 °C and a 0.8 V memory window after 5 × 103 P/E cycles operations.
This suggests that the memory device has great potential for high-density memory application.
This memory device has great potential for future nanoscale high-density non-volatile memory applications.
The memory device has good data retention of >103 s with acceptable resistance ratio of >10.
However, no flexible memory device has been demonstrated and detail switching dynamics is still unclear in this material.
This via-hole memory device has read pulse endurance of >105 cycles and good data retention at 85°C (not shown here).
Similar(49)
A memory device having a data capacity of tens of GB is limited to the Flash-ROM when resources such as size and power are taken into consideration.
The recent advent of stacked memory devices has led to a resurgence of research associated with the fundamental memory hierarchy and associated memory pipeline.
The dot size of nanocrystalline germanium (NC Ge) which impacts on the charging dynamics of memory devices has been theoretically investigated.
The demand for low-power, high-speed, and high-density non-volatile memory devices has increased drastically over the past decade due to the growing market of consumer electronics.
Sales of microprocessors were up 7.8percentt, and sales of dynamic random access memory devices had risen 11percentt since July.
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