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Conductance switching at a voltage of about −2.1 V is observed in the memory device based on the PVBEC brushes.
Compared with NTPA2BT, the fabricated memory device based on NTPA2EBT of extra alkynyl bridges presents nonvolatile ternary memory performance with lower threshold voltages, better stability and higher reproducibility.
More significantly, the memory device based on EMAR+CNTs composite exhibits multilevel stable conductivity states with stable intermediate resistance states in response to the applied voltage.
The write/erase (W/E) and data retention characteristics of a memory device based on silicon/oxide/silicon dot/oxide/silicon structure were simulated.
The results indicated that the reproducibility of the switching phenomenon for the memory device based on the carbazole containing naphthalimide derivative was much better than that based on the triphenylamino based naphthalimide due to the rigid carbazole moiety which improved the surface morphology as revealed by atomic force microscopy measurement.
The memory device based on PI DAT-6FDA) showed an unstable volatile behavior, while the device based on PI DAT-6FDAA) with a more bulky donor (D) unit exhibited a showed non-volanile FLASH type memory characteristic with a long retention time over 104 s.
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We report on non-volatile memory devices based on multifunctional manganites.
Researchers are now one step closer to realizing the full potential of next-generation memory devices based on phase-changing material.
The memory devices based on each molecule exhibited similar write-once-read-many-times characteristics but different switch threshold voltages.
In this study, we present non-volatile resistive switching memory devices based on a natural-derived DNA biomaterial.
Intel and Macronix plan to report on progress in memory devices based on chalcogenide, an inexpensive inorganic compound used in CD's and DVD's that can be rewritten.
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