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Using an event-related memory design is time consuming and demanding on patients and personnel.
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One significant advantage polymer memory has over conventional memory designs is that it can be stacked vertically, yielding a three-dimensional (3-D) use of space [11].
As a new concept of non-volatile memory technology, a nano-electro-mechanical (NEM) diode non-volatile memory cell design is proposed.
To reach optimal system-level performance, memory subsystem design is considered in the pre-architecture design stage, which narrows down the huge design space to applications of a specific domain.
FDTD is a data-intense algorithm; the bottleneck of the hardware design is its memory interface.
The potential for all memory-centric designs is the bandwidth between memory and the nearest computational unit.
Thus, the total memory locations required in [6] design is MK.
Therefore, alternative memory device designs are proposed to overcome these challenges.
Then the H∞ performance analysis and the memory state-feedback controller design are carried out for a given performance index.
The following floating point pixel calculation module and memory access stages of the design are all pipelined.
To test for subsequent memory effects, an event-related design was used to compare encoding-related responses to individual stimuli that were subsequently remembered versus stimuli that were forgotten (Friston et al., 1998).
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