Sentence examples for memory density of from inspiring English sources

Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.2.

Considering a small filament diameter, a high memory density of approximately equal to 100 Tbit/in.2 could be designed in the future.

From the collective analysis of GIRAS, GIWAXD, and AFM data, annealing the as-cast sample at temperature (ca. 120 °C) above Curie transition, but below its melting transition temperature was found to be the most suitable condition to fabricate the NvFePoRAM and/or SPM-based storage device with a memory density of about 30 GB/in2.

Specially, the crystallites formed at high temperature in the copolymer P VDF-TrFE) 50:50 mol% exhibit less ordered ferroelectric crystalline sequences, thus attaining the excellent features of the low oP VDF-TrFEoltage of about 4 V with a switching time of 100 ms, ultra-high memory density of 43.9 Gbit∙in−2 (by a 7 V, 1 ms pulse) and a high usage temperature of 60 °C.

Considering the narrow interfaces of ∼2-nm-width, the resistive switching behavior illustrated in nanoscaffold structures can potentially lead to a memory density of 40 Tb/in.

To increase the storage density of memory, MLC is used to store more than 1 bit within a single memory cell[8, 9].

This comprises the doubling of the memory density and furthermore even higher integration is in principle not limited by this technique, while the CMOS overhead increases only slightly.

In addition, with growing demand for high-density digital information storage, NAND Flash memory density has been increased dramatically for the past couple of decades.

With growing demands for high-density digital information storage, memory density with arriving technology has been increased dramatically from the past couple of years.

After a typical heat treatment for dynamic random access memories (DRAMs), the density of silicon oxide precipitates in the vacancy-dominant crystal regions was approximately two orders higher than interstitial-silicon-dominant crystal regions.

HP's demonstration has about ten times the density of memory of the best silicon DRAM memory on the market today.