Sentence examples for memory characteristics with from inspiring English sources

We optimized the doping concentration such that our FeFET memory devices exhibit excellent memory characteristics with a low programming voltage while maintaining a large modulation in channel conductance and a long retention time.

On the other hand, the repeatable resistive switching memory characteristics with a small CC of 1 nA and a small RESET current of 64 pA are also observed in the S1 devices (Figure 12c).

Devices with the active layer based on DPBD, BBPBD and BNPBD exhibited nonvolatile and rewritable flash type memory characteristics with the turn-on voltage at −2.0 to −3.0 V and the turn-off voltage at 2.0 3.0 V.

Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 × 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFF ratio higher than 102.

Semiconductor parameter analysis indicates that the synthesized PIs containing no less than 5 mol% of Fc, possess nonvolatile flash memory characteristic with excellent operational stability and transient response to applied voltage.

The memory device based on PI DAT-6FDA) showed an unstable volatile behavior, while the device based on PI DAT-6FDAA) with a more bulky donor (D) unit exhibited a showed non-volanile FLASH type memory characteristic with a long retention time over 104 s.

The memory devices with Si NCs/SiO2 hybrid film as floating gate yield good retention characteristics with small charge loss.

Note that these parameters are important in determining the non-volatile memory characteristics, especially with regards to the programmed/erased bit distribution and data retention.

Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications.

Many reports have suggested that nanowire ferroelectric field effect transistors (NW FeFETs) have higher performance, that is, longer retention time, and better endurance memory characteristics compared with thin-film-based FeFET memory devices.

Although the BirthMARQ is unique in the sense that it is the only memory questionnaire developed specifically for measuring childbirth memory characteristics, comparison with general memory characteristic questionnaires would nevertheless be informative.