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The material properties of the epoxy/PCL polymers as well as the crystallization of the PCL and the shape memory characteristics are examined in this work.
Resistive switching memory characteristics are explained here.
The resulting Cu oxidation and memory characteristics are explained below.
In addition, thickness-dependent resistive switching memory characteristics are also observed.
Using chalcogenides, oxides, and bilayer materials in the above structures, the resistive switching memory characteristics are explained below.
Further, metal-oxide-semiconductor (MOS) capacitors with Pt nanodots have been fabricated, and the corresponding memory characteristics are measured.
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Then, metal Al2O3 HfO2 Al2O3 HfO2 SiO2 Si (MAHAHOS) structure and metal Al2O3 HfO2 Al2O3 HfO2 Al2O3 Si (MAHAHAS) structure memory devices were fabricated and the memory characteristics were compared.
The memory characteristics were investigated by measuring 100 randomly picked devices.
Memory characteristics were measured using an HP4156C semiconductor parameter analyzer (Agilent Technologies, Santa Clara, CA, USA).
Memory characteristics were measured by using Agilent 4156C semiconductor parameter analyzer.
Memory characteristics were measured by an Agilent 4156C semiconductor parameter analyzer.
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