Sentence examples for memory cells relative from inspiring English sources

We demonstrate that the protein BMI1, which is involved in many aspects of T cell biology including proliferation and survival, is also expressed at higher levels in memory cells relative to the level found in effector cells[13], [14].

We found that the gene that was most highly expressed in memory T cells relative to the amount expressed in effector cells was BMI1 (Fig. 4).

62 This leads to an increase in memory T cells relative to naïve T cells.

For example, expression of either Krüppel-like factor (Klf) 2 or Ski, two transcriptional regulators specifically enriched in memory B cells relative to their GC precursors, imparts a competitive advantage to BCR- and CD40-engaged B cells in vitro.

To further characterize the function of MVA85A-induced memory cells, we measured the relative proportions of Ag85A-specific CD4+ T cells expressing IFN-γ and/or IL-2 at 7, 28, and 168 days after MVA85A vaccination (Fig. 4D).

Promoter regions of the kinases LYN and SGK1 as well as the methyl-transferase/hydrolases METTL7A and DDAH2 were hypomethylated with concurrent increases in gene expression levels in naïve CD4+ T cells relative to memory T cells (Additional file 20: Figure S11).

a, GSEA of a signature of the top 200 genes upregulated in exhausted CD8 T cells relative to naive or memory CD8 T cells as derived from GSE41867, demonstrating enrichment of exhaustion signature in TRAC-1928ζ TRAC-1928ζC-1XX or TRAC-XX3 and in the sorted control TEFF versus TN and TSCM.

Similarly to what observed in HIV-infected patients, ASCT recipients present a phenotypic CD4+ pattern characterized by a relative expansion of effector memory cells and a loss of central memory cells, which has been hypothesized disadvantageous in chronic infections.

This relative increase in specific memory cells could be caused by the specific survival of cells activated through high affinity to GAD65 antigen, or by their location in niches inaccessible to the treatment.

Part of the problem with silicon-based flash is that as memory cells get smaller, the transistor gates have to be thicker relative to the rest of the circuit in order to store sufficient charge, and these thick-gated cells tend to interfere with their neighbors.

These findings do not contradict our data since it remains possible that ATR and CHK1 are expressed at induced levels in GC B cells relative to expression levels in naïve and memory B cells despite coincident BCL6 repression.