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Kim, S. et al. A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer [abstract 30.7].
The structure of a molecular memory cell with its work based on the phenomenon of structural instability of one-dimensional conductive molecular systems is offered.
In this paper, using a robust 2 1 multiplexer, efficient level triggered and edge triggered QCA D flip flops and a memory cell with set/reset ability will be introduced.
We fabricated TiN/Hf:SiO2/Pt memory cell with the small size of 1×1 um2 by lithography and sputtering technology, which demonstrated excellent bipolar resistive switching (RS) characteristics.
More than one bit of data is obtained from a single ferroelectric memory cell with such a stagger configuration.
Figure 4 shows the I R curve for the 1T1R memory cell with the resistance as a function of the current under different pulse amplitude for SET operation.
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Hu, H. et al. CD4+ T cell effectors can become memory cells with high efficiency and without further division.
For example, memory stem cells (TSCM) and memory cells with naive phenotypes (TMNP) have been detected in T cell populations previously characterized as being naive10,11.
In contrast, CAR T cells with CD28 domains yielded effector memory cells with a genetic signature consistent with enhanced glycolysis.
Nascimbeni, M., Shin, E. C., Chiriboga, L., Kleiner, D. E. & Rehermann, B. Peripheral CD4CD8 T cells are differentiated effector memory cells with antiviral functions.
This spring, Pop's group at the University of Illinois demonstrated storage arrays that use carbon nanotubes to encode phase-change memory cells with 100 times less power.
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