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Electrophysical parameters of the molecular analogue memory cell were investigated.
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A graphite memory cell is composed of sheets of graphite deposited between two electrodes.
The new memory cell was used as a basic component for the SI blocks.
In this paper a high speed class AB switched-current memory cell is presented.
The core of the readout chip, a fast operating current memory cell, is discussed in detail.
The influence of various parameters on device performance as abrupt switch or memory cell is investigated.
A conclusion is drawn that the design of memory chips based on the molecular analogue memory cell is promising.
The memory cell is special because it allows a continuous voltage to be applied to the MEMs switches to hold them in the required position.
Since memory is one of the most applicable basic units in digital circuits, having a fast and optimized QCA-based memory cell is remarkable.
The memory cell was integrated in the CMOS process.
The endurance characteristics of the Au/ZnO: Ti/ITO memory cell are shown in Figure 4a.
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