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The core of the readout chip, a fast operating current memory cell, is discussed in detail.
In this paper a high speed class AB switched-current memory cell is presented.
The influence of various parameters on device performance as abrupt switch or memory cell is investigated.
The memory cell is mainly constituted by a thin film of chalcogenide material layer in contact with a metallic heater.
A conclusion is drawn that the design of memory chips based on the molecular analogue memory cell is promising.
Although the device can be reset to HRS at applied +4 V bias (Fig. 8g), the memory cell is degraded after several switching cycles.
Similar(35)
The memory cell was integrated in the CMOS process.
Electrophysical parameters of the molecular analogue memory cell were investigated.
The endurance characteristics of the Au/ZnO: Ti/ITO memory cell are shown in Figure 4a.
The new memory cell was used as a basic component for the SI blocks.
CNT geometric uniformity and the ability to position CNTs in a regular array suitable for addressing as a RAM memory cell are both issues that remain open.
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