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Long-lived memory cell, in case a similar antigen appears.
Figure 3 Separation distance of the short nanotube-based memory cell in SRAM configuration.
In this paper, we design a new structure for content addressable memory cell in QCA.
An additional transistor and a transmission gate are utilized for selecting a memory cell in the NVSRAM array.
The dynamic random access memory (DRAM) has become as an integral memory cell in the mobile and computing system [1 3].
Figure 1 shows the bipolar current voltage (I-V) characteristics of the carbon memory cell in semi-logarithmic scale under DC voltage sweeping mode at room temperature.
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The research, published in the journal Nature, specifically targeted memory cells in the hippocampus region of the brain previously identified by Tonegawa's team.
There are 16 memory cells in each ARAM consuming 35.15 μA/cell.
In addition, the continuum model developed in this paper will help to study feasibility of large nanotube-based memory cells in practical applications.
In the memory reinforcement process, new associative memories will be generated when the memory cells in the current architecture are found insufficient.
Similarly, an RNN exploiting long-range temporal context by using memory cells in the hidden units was applied to dereverberation in [7].
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